| 摘要 |
PURPOSE:To reduce the number of processes requiring position alignment, by forming an insulating layer in a substrate by ion implantation, with an implantation blocking layer that is deposited on an element isolating region as a mask, and growing an epitaxial semiconductor layer in a region other than the region, on which the implantation blocking layer is deposited. CONSTITUTION:An SiO2 layer 2 having a thickness of 2mum is deposited on a p type Si substrate 1 as an implantation blocking layer. Patterning is performed, and only an element isolating region is made to remain. Then, with the SiO2 layer 2 as a mask, O2 ions are implanted, and SiO2 layer 3 is formed in an Si substrate 1 as an insulating layer. The SiO2 layer 3 forms an in isolating region 4 in the substrate. The region 4 is used for longitudinal isolation in the substrate. Then, with the SiO2 layer 2 as a non-selecting layer, only a part on the isolating region 4 is selected. An n<+> type Si layer 5 is epitaxially grown as an embedded layer. An n type Si layer 6 is longitudinal isolation of the substrate is performed by SIMOS. The lateral isolation is performed by the SiO2 layer using selective epitaxial growing. The elements are formed in the isolated n type Si layer 6. |
