| 摘要 |
PURPOSE:To improve stability over a long period of time by forming a film while changing high-frequency electric power in the stage of forming tellurium or tellurium oxide from the metallic tellurium vapor passing through gaseous plasma on a substrate. CONSTITUTION:The inside of a vacuum vessel 3 is evacuated to a high vacuum and thereafter high-purity gaseous oxygen and/or inert gas is introduced into the vessel. A high-frequency electric field is generated by a high-frequency excitation coil 4 to excite the gas and to form the plasma. Electricity is then conducted to a heating boat 2 to heat, melt and evaporate the metallic tellurium 1. For example, the continuous change of the film compsn. from X=0 to X=2.0 from the substrate surface toward the film surface is made possible by evacuating the inside of the vacuum vessel to 1X10<-5>Torr initial pressure P, introducing the gas into the vessel to maintain 4X10<-4>Torr degree of vacuum in the device, impressing high-frequency electric power of 13.56MHz frequency and 50 watt to the high-frequency coil to start the film formation while generating the plasma and continuing the film formation until 500 watt is attained while increasing gradually the high-frequency electric power.
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