| 摘要 |
PURPOSE:To produce semiconductor device with resistor layer subject to extremely high resistance value and high yield by a method wherein an impurity layer and an oxide film coating the impurity layer are provided on the surface layer of a semiconductor substrate while the impurity layer is heattreated either in the atmosphere of mixed gas containing oxygen exceeding 5vol% and residual nitrogen or in the atmosphere of oxgen gas. CONSTITUTION:A silicon oxide film 3 is formed on an N-type epitaxial growing layer 2. Then a pattern in resistor layer region is formed on the oxide film 3 to remove said oxide film 3 by etching process. Next another thin oxide film 4 is formed at high temperature oxidizing atmosphere on the layer 2 (resis tor layer region) and residual oxide film 3 further implanted with specified dosage of boron to be heattreated at high temperature atmosphere of mixed gas forming P type diffusion resistor layer 5 in the layer 2. Finally the thin oxide film 4 on layer 2 corresponding to the electrode forming parts on both ends of resistor layer is removed to deposit a boron silicate glass 6 as boron source on the thin oxide film 4 and the patterned layer 2 so that the glass may be thermodiffused in the layer 2 to form a P<+> region 7 bringing the glass 6 into ohmic contact with electrode. |
