MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To realize the lower temperature and simplification of processes while improving the insulating isolation characteristics by a method wherein a silicon layer is directly selected for oxidation to form an insulating isolated region. CONSTITUTION:After finishing single crystallization of a silicon layer 3 below a poly cap 1 by means of irradiating the silicon layer 3 covered with the poly cap 1 with energy beams, an insulating isolated region is removed by dry-etching process and then the silicon layer 3 is plasma anode-oxidized by means of supplying voltage from a terminal 8 utilizing the recrystallized Si layer 3 as an anode. At this time, plasma anode-oxidation is stopped when overall insulating isolated region is oxidized since the poly cap 1 is not connected to the anode but through the intermediary of an insulating layer 2 to make the oxidation speed slower than that of recrystallized silicon layer 3. Finally the recrystallized silicon layer 3 may be insulation-isolated by means of dry-etching process until an oxide film 7' on the poly cap 1 is entirely removed and selectively etching the residual polycrystalline silicon 1' of poly cap 1 after continuous dry-etching for removing residual insulating film 2 below the cap silicon 1'.