| 摘要 |
PURPOSE:To obtain a high-reliability semiconductor device with high yield by reducing a contact resistance by forming a semiconductor layer after damaging a natural oxide film existing on a boundary by implantation of the ions of a high-melting-point metal and forming a compound layer of high-melting- point metal on an impurity region. CONSTITUTION:A silicon oxide film 15 is etched to define an impurity layer 14, a gate electrode 13, or in the part where the connection between the resistance layers must be contrived, a contact window 15a. The ions of a high- melting-point metal such as Ta, W, Ti or Mo is implanted to damage a natural oxide film 16 and a compound layer 17 of a high-melting-point metal of low resistance is formed on the impurity layer 14. After that, polysilicon is spread followed by pattern etching to form a resistance layer 18. The resistance layer 18 is connected to the impurity layer 14 through the compound layer 17 and a good ohmic contact of small contact resistance is formed between the resistance layer 18 and the impurity layer 14. Subsequently, the resultant semiconductor device is subjected to a heat treatment such as annealing. |
