| 摘要 |
PURPOSE:To enhance photoconductivity characteristics by subjecting the surface of an aluminum substrate in advance to form an anodized layer composed of a barrier layer and a porous layer and depositing the amorphous silicon on the surface of the porous layer. CONSTITUTION:The aluminum substrate 10 is subjected to anodic oxidation to form the anodized layer composed of the porous layer 21 and the barrier layer 22 so as to control the thickness beta of the layer 21 in the range of 0<beta<=5[mum], and the thickness alpha of the layer 22 in the range of 10<=alpha<=500[Angstrom ]. The amorphous silicon is deposited directly on the surface of the layer 21 to form a photoconductive layer 30, and then, a-SiC, a-SiN, or a-SiO is deposited on the surface of the layer 30, thus permitting the mechanical strength and the overall photoconductivity characteristics of all the system including the layer 30 and the substrate 10 as the photosensitive body to be enhanced. |
