| 摘要 |
PURPOSE:To enable the minute processing without thickening a masking layer unnecessarily and to contrive reduction of the processing time by using a photoresist and a metal (preferably aluminum) as a mask. CONSTITUTION:A silicon oxide film 2 (gate insulating film) is formed on a silicon substrate 1. By using a patterned photomask as a mask, the second layer photoresist 6 is irradiated with ultraviolet rays for development thereby forming a pattern on the photoresist 6. Dry etching of an aluminum film 5 is done by using a carbon tetrachloride gas or the like. The first layer photoresist film 4 is patterned by dry etching using an oxygen gas or the like and the aluminum film 5 as a mask. After that, the aluminum film 5 is etched until it is removed completely by the aluminum etching solution consisting of phosphoric acid of about 50 deg.C mainly. After the removal of the film 5, the first layer photoresist 4 is removed by immersing the substrate in a photoresist remover consisting of an organic solvent of phenol group mainly. |
