| 摘要 |
In order to reduce afterimage due to intensive light photoconductive film was made of amorphous material contg. selenium. The photoconductive layer consisted of mainly selenium and a little amount of tellurium along some part of the layer. At least one oxide or fluoride from II, III, VII gp. was arranged contiguously to tellurium along another width of the layer which could produce neg. elec. charge in selenium.
|
