| 摘要 |
PURPOSE:To make mounting process stable while reinforcing the basic metal bonding strength by a method wherein a barrier metallic film below bump is etched into required shape before forming bump and then the bump is formed into selfmatched structure. CONSTITUTION:An insulating film 2, a wiring metallic film 8 and an insulating protective film 4 are formed on a semiconductor substrate 1 and then a barrier metallic film below bump is formed on overall surface to form another barrier metallic film 5 below bump by photoetching the former barrier metallic film. The bump electrode is composed of a bump electrode part, a lead part 9 to supply current for electroplating process. Later a resist film 10 is formed by means of coating photoresist to prevent the lead part 9 from being bonded with bump metal. The bump metal may be selfmatchingly grown on the insulating protective film 4 to shape the bump electrode into a stable base form since it is grown isotropically on a barrier metallic film as a plating electrode. Finally the bump electrode may be completed by means of etching the barrier metallic film 9 of lead part connected for plating process. |
