| 摘要 |
PURPOSE:To contrive a reduction in current density and an augmentation in the maximum controllable current by a method wherein the respective passages for minority carriers and majority carriers, which are injected in the base region on one side, are separate-limited and high-impurity density regions, which have an inverse conductive type to the conductive type of the base region and are brought into a low-resistance state, and a gate are provided on the passage for the minority carriers. CONSTITUTION:When a positive voltage and a negative voltage and respectively impressed on an anode A1 and a cathode K, a positive pulse voltage is impressed on an N-type base layer Nb and a gate G is brought into a conducted state, electrons, which are injected in the layer Nb from an N-type emitter layer Ne, flow in a region B, the layer Nb and the N-type emitter layer Ne and bond with positive holes, while the majority of positive holes, which are injected in the layer Nb from the layer Ne, flow in low-resistance regions C as the potential of the region B is high and gap regions D are narrow, and further flow in a P type base layer Pb. Then, when a negative voltage is impressed on the gate G, the P-N junctions of the layer Nb and the P-type regions C are biased in the reverse direction, the positive holes which flowed in the regions C, are extracted through the gate G and the passage of the positive holes through the gap regions D is stopped by the gap regions D as the gap regions D respectively become the area of a depletion layer making a P-N junction. As a result, this turn-OFF thyristor is turned into an OFF-state layer. |
