| 摘要 |
PURPOSE:To obtain a pattern forming material capable of forming a conductive pattern good in dry etching resistance and high in resolution by using a specified phthalocyanine deriv. CONSTITUTION:The pattern forming material is a phthalocyanine deriv. represented by the formula, each of R1-R8 being a side chain or H, and M being H or metal ion. A pattern is formed by patternwise exposing it with electron beams, X-rays, UV rays, or the like and developing it to leave the exposed parts. Since the pattern is formed by utilizing that the chemical structure is changed by irradiation of radiation and the solubility is changed, swelling at the time of development can be avoided, resolution can be enhanced remarkably, and a submicron pattern can be formed even when a film is thick. |
