| 摘要 |
PURPOSE:To enable to perform an anisotropic etching on the material to be etched as well as to contrive improvement in the ratio of selectivity of the etching rate for resist by a method wherein a specific mixture gas is used as the processing gas for a dry etching. CONSTITUTION:An etching is performed using the mixed gas of the gas, having the molecular structure wherein a part of the fluorine of fluorocarbon is replaced with hydrogen and oxygen, or the mixed gas of fluorocarbon, hydrogen and oxygen, or the mixed gas of fluorocarbon, the gas having the molecular structure in which a part of the fluorine of fluorocarbon is replaced with hydrogen, and oxygen are used as the processing gas for the dry etching to be performed on an Si material. When the mixed gas such as above-mentioned is used for the dry etching to be performed on the Si material which will be used as the material to be etched, the material is anisotropically etched and the ratio of etching of the resist which becomes a mask when the etching is performed can be improved. |
