| 摘要 |
PURPOSE:To provide the titled apparatus capable of obtaining a uniform film like substance, constituted in such a mechanism wherein a gas containing a stock gas heavier than a carrier gas is introduced into a chamber from under a substrate holding part therein and discharged from above said substrate holding part to uniformize the stock gas in the flat surface direction of a substrate. CONSTITUTION:In the chamber of a chemical vapor deposition apparatus, a gas introducing part 11 for introducing a gas containing a stock gas is provided below a substrate holding member 13 holding a substrate 1 and a gas exhaust part 12 is provided thereabove. In addition, a heating part 14 controlling the temp. of the substrate 1 is provided to the external part of the chamber 10 to heat the substrate holding part 13 in a state surrounding the same. When chemical vapor deposition is carried out according to this constitution, the stock gas heavier than the carrier gas is uniformly accumulated in the lower part within the chamber 10 to be succeedingly pushed upwardly and reaches the substrate in a uniform distribution state. In addition, a first and a second uniformizing 15, 16 are provided between the substrate holding part 13, the gas introducing part 11 and the gas exhaust part 12 to be able to further uniformize the thickness distribution of a film grown on the surface of the substrate 1. |
