发明名称 DEVICE FOR CRYSTAL GROWTH BY MOLECULAR BEAM
摘要 PURPOSE:To prevent contamination of a single crystal growth layer and to contrive the improvement in thermal efficiency and controllability of the temperature of the molecular beam source cell by burying a heater for heating a cell in the wall of the molecular beam source cell. CONSTITUTION:A heater is buried in a cell 1 which can be formed easily by attaching the heater 2, for example, made of tantalum to the wall which has grown half during the process for growing boron nitride (BN) into the required shape by chemical gas-phase growth and continuing the growth of BN. This heater 2 is connected to a power source for a heater and controls the temperature of the material 5 of a molecular source in the cell 1 by monitoring it by a thermocouple 4 for controlling a temperature similarly in a conventional device for crystal growth by molecular beams. A heat radiation reflective plate is not so necessary as in a conventional device, but it improves a thermal efficiency.
申请公布号 JPS61141119(A) 申请公布日期 1986.06.28
申请号 JP19840263375 申请日期 1984.12.13
申请人 FUJITSU LTD 发明人 IGARASHI TAKESHI;SAITO JUNJI
分类号 H01L21/20;H01L21/203;H01L21/205 主分类号 H01L21/20
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