发明名称 COMPOSANT SEMI-CONDUCTEUR SUPERPOSE
摘要 A stacked semiconductor device includes a first integrated circuit formed on the principal surface of a semiconductor layer and containing active elements, and a second integrated circuit formed on the first integrated circuit through an insulation layer and containing active elements. The second integrated circuit is formed on that part of the surface of the first integrated circuit which is exclusive of selected active elements, to establish an open space for heat dissipation.
申请公布号 FR2517125(B1) 申请公布日期 1986.06.27
申请号 FR19820019666 申请日期 1982.11.24
申请人 MITSUBISHI DENKI KK 发明人 TADASHI NISHIMURA ET YOICHI AKASAKA
分类号 H01L27/00;H01L25/065;H01L27/14;(IPC1-7):H01L25/08 主分类号 H01L27/00
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