| 摘要 |
PURPOSE:To obtain the film made of Si nitride or aluminum nitride and much superior to Si oxide in adhesion of a high melting point metal formed thereon, by a method wherein stable nitride films giving no damage to base Si oxide films are formed by CVD. CONSTITUTION:An Si substrate 1 having the surface to be formed is held by a holder 1' and inserted into a reaction chamber 12. The vacuum degree of this chamber is set at 10<-7>torr or less, and a film is formed by introducing nitrogen 28 into the reaction chamber further by a reactive gas 37. A low-tension mercury vapor lamp 34 is used as the reaction light source, and a water cooler 31' is provided. Its ultraviolet rays irradiate the surface to be formed 1 of the substrate 1 in the reaction chamber 12 after passing through a quarz 40 which is the photopermeable shielding plate. A heater 13 uses 'Deposition up' system of location above the reaction chamber and prevents flakes from causing pin holes by deposition on the surface to be formed. The reaction chamber is made of stainless: the light source chamber and the heating chamber 30 are both drawn to vacuum, and the difference in pressure is 10torr or less.
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