| 摘要 |
PURPOSE:To obtain the titled device excellent in adhesion of a gate electrode of high melting point metal by forming a double-layer film having an aluminum nitride film or an Si oxide film and an aluminum nitride film provided thereon. CONSTITUTION:An N-channel IGP has a P-channel forming region 10 on a substrate 1 and a gate electrode 6 made of metallic tungsten. The Si oxide film 3 has a 300Angstrom thickness, and the aluminum nitride film 4 thereon is formed to 30-4Angstrom thickness by photochemical reaction, which films are the gate insula tor 5. After formation of the gate electrode, a source 7 and a drain 8 are pro duced by self-alignment. In such an IGF, a lead metal such as Mo, Ti, W, WGi2, MoSi2 or TiSi2 which is a heat-resistant metal forming no AIN, i.e. not observ able only in Si oxide has excellent close adhesion with the base insulation film. |
