| 摘要 |
PURPOSE:To enable the formation of the upper layer single crystal semiconductor substrate of good quality by a method wherein the impurity introduced region of reverse conductivity type of the lower device formed in the lower layer semiconductor substrate of one conductivity type is partly provided with an impurity introduced region of reverse conductivity type with a low concentration enough to generate no crystal defects. CONSTITUTION:In order to form a MOSIC of three-dimensional structure, the first As implanted region A1 is formed in the element-forming region DA by As ion implantation at a dosage of e.g. 10<12>cm<-2>, using the mask of a gate electrode 25. Next, a resistor pattern 26 of required dimensional shape which covers part of the region is formed on the region forming a source. Using the mask of the resistor pattern 26 and the gate electrode 25, the second As implanted region A2 is selectively formed in the element-forming region DA by As ion implantation at a high dosage of approx. 10<15>-10<16>. Thereafter, the upper layer single crystal semiconductor substrate on which the upper device is formed is formed by lateral sealing. |
