| 摘要 |
PURPOSE:To facilitate the formation of the title device which keeps required characteristics without generating wafer warps or passivation film cracks by a method wherein a passivation film is made of an oxide film, a PS'G film, and a semi-insulation polycrystalline film which have been successively laminated on the mesa part. CONSTITUTION:This semiconductor device has a semiconductor pellet 1 with an N<+> diffused layer formed on one surface and a P<+> diffused layer formed on the other surface and a passivation film 10 of multilayer laminated structure provided at the mesa part 2 of forward bevel structure formed on the side surface of the pellet 1. This passivation film 10 is made of an SiO2 oxide film 14, PS'G film 15, and polycrystalline Si semi-insulation film 16 basically succes sively laminated on the mesa part 2. Since its principal structure is made up of a pellet and semi-insulation polycrystalline film with a small difference in the coefficient of thermal expansion, the film generating no cracks and sufficient ly shielding the leak-out of surface electric fields can be constructed. |
