DISPOSITIF A CIRCUITS INTEGRES A SEMICONDUCTEURS ET PROCEDE DE FABRICATION DE CE DISPOSITIF,申请号FR19820013878-传众专利搜索

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发明名称	DISPOSITIF A CIRCUITS INTEGRES A SEMICONDUCTEURS ET PROCEDE DE FABRICATION DE CE DISPOSITIF
摘要
申请公布号	FR2513810(B1)	申请公布日期	1986.06.27
申请号	FR19820013878	申请日期	1982.08.09
申请人	HITACHI LTD	发明人	ISAO SHIMIZU
分类号	H01L21/8226;H01L21/02;H01L21/331;H01L27/02;H01L27/082;H01L29/73;(IPC1-7):H01L21/72	主分类号	H01L21/8226
代理机构		代理人
主权项
地址

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