| 摘要 |
PURPOSE:To stably promote the passivation for the positive electrode side by directly applying the voltage between the juncted p-layer and the n-layer. CONSTITUTION:The n-layer is used for positive electrode and the p-layer is used for the negative electrode in the p-n junction silicon wafer so that the negative electrode current flowing into the alkaline solution is restricted only to the n-layer, with the result that the current does not flow from the p-layer. Since the passivation layer is formed only by the positive electrode current, it is made possible to stably promote the passivation on the n-layer part as a positive electrode, thereby permitting the etching in a stabilized state. |
