| 摘要 |
PURPOSE:To shorten the time for heat treatment for forming a grounding connecting region by forming the grounding connecting region in structure in which the region is shaped by polycrystalline silicon. CONSTITUTION:An N<+> buried layer 5 is formed selectively to a P-type silicon substrate 1, and a polycrystalline silicon film 11 is applied through a vapor phase growth method and patterned, and left only to a grounding connecting region forming section. The silicon substrate 1 is heated at a high temperature of 1,000 deg.C or higher, silicon tetrachloride gas, into which phosphine is mixed, or monosilane gas is decomposed, and an N-type silicon layer 2 is grown in an epitaxial manner. Consequently, the upper section of the polycrystalline silicon film 11 is not changed into a single crystal, and polycrystalline silicon 13 is grown. A resist film mask 7 is patterned onto the N-type silicon layer 2, only the polycrystalline silicon 13 is exposed, and boron ions are implanted to the exposed section. Boron is diffused to the whole polycrystalline silicon 13 through heat treatment at a temperature of 1,100 deg.C, and the polycrystalline silicon 13 is changed into a P type. |
