| 摘要 |
PURPOSE:To prevent the formation of an abnormal layer between an InP layer and substrate in the stage of growing the InP layer by a vapor epitaxial growth method on the substrate by etching the surface of the substrate by hydrochloric acid then growing InP in a vapor phase. CONSTITUTION:A quartz boat 5 contg. In4 and the substrate 6 on the down stream thereof are disposed in a quartz reaction tube 1. If foreign matter such as dust exists on the substrate suface, the abnormal layer nucleating at the dust, etc. is formed between the substrate surface and the InP layer to be grown thereon. Supply pipes 2, 3 for gaseous H2 contg. PCl3 are provided in the tube 1 and the opening of the pipe 3 is placed between the boat 5 and the substrate 6 in order to prevent the formation of such layer. The gaseous mixture composed of H2 and PCl3 supplied from the pipes 3 and 2 is so adjusted that the ratio of the molar number M2 and M1 of PCl3 attains 0.15-0.25. The surface of the substrate 6 is then cleaned up by HCl consisting of H2 and PCl3 and thereafter the InP layer is grown by the In in the boat 5 and the PCl3 in the gaseous mixture from the pipe 2.
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