| 摘要 |
PURPOSE:To form a high speed, high performance, three-dimensional device, by differentiating the crystal plane orientation of the surface of a substrate from the plane orientation of the recrystallized thin film layers, which are formed on the substrate in one or more layers. CONSTITUTION:The crystal plane orientation of a recrystallized Si thin film 18 is a (100) plane. An N type MOS transistor is formed so that N type high concentration impurity regions 21 and 22 are a source and a drain, respectively, a poly Si layer 20 is a gate and an SiO2 film 19 is a gate insulating film. In this case, a P type transistor is formed so as to have a (110) plane. Thus, the peak value of the carrier mobility is increased to twice or more the conventional value. |
