| 摘要 |
PURPOSE:To manufacture the titled device through a simple bipolar technique by using a lateral type transistor for switching a photoelectric conversion section and combining the transistor with a bipolar type scanning circuit. CONSTITUTION:A lateral PNP switching transistor forming a photoelectric conversion element uses a photodiode 3 functioning as photoelectric conversion and charge storage in combination as an emitter and a signal-reading electrode diode 4 as a collector. A base 7 is connected to a scanning element. The scanning element is constituted by a conductance transistor HCDT with a hook consisting of a base 16, an emitter 15 and a collector 14 and an address-signal extracting electrode 9 for a scanning circuit. A process requiring precise control is unnecessitated in the structure, and a simple manufacturing process may be employed, thus improving the yield on manufacture. |
