| 摘要 |
PURPOSE:To etch a transparent and electrically conductive film of SnO2 or a binary system consisting of In2O3 and SnO2 with high pattern accuracy by immersing the film in a dil. acid cong. a base metal and by treating it with an acidic soln. cong. FCl3. CONSTITUTION:A transparent and electrically conductive film 1 of SnO2 or a binary system consisting of SnO2 and In2O3 is stuck to a substrate 2 and covered with an etching resistant film 3 for an etching pattern. The substrate 2 is immersed in dil. hydrochloric acid 4 having 0.5-10wt% concn., and powder of a base metal 6 such as Zn is fed from a feeder and reacted with the acid 4 to generate hydrogen. The surface of the film 1 is made easily etchable by the generatesd hydrogen. The substrate 2 is then immersed in an etching soln. 8 at 45 deg.C to etch the part of the film 1 not covered with the film 3 with high pattern accuracy. The soln. 8 is prepd. by mixing an aqueous FeCl3 soln. having 40 Baume degree with hydrochloric acid having 35.5wt% concn. in 4:5 ratio.
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