发明名称 METHOD FOR PEELING RESIST FILM
摘要 PURPOSE:To enable a resist film to be peeled in a short time by placing a substrate with the resist film attached to it on a heating table to heat it, and irradiating it with UV rays in an atm. of oxygen. CONSTITUTION:The substrate 12 with the resist film 11 attached to its surface is placed on the heating table 13, and the table 13 is surrounded with an oxygen ejection pipe 15 for ejecting oxygen 14 in the arrow direction so as to cover the surface of the substrate 12 with an oxygen stream. A UV irradiation device 16 is arranged above the substrate 12, and the substrate 12 is irradiated in the arrow direction with UV rays of about 2,000Angstrom wavelength, e.g., from a mercury arc lamp at a rate of 10mW/cm<2>. A heater 18 is installed in the inside of the table 13 to heat the substrate 12, thus permitting the resist film to be perfectly peeled off by the chemical reaction on the surface of the resist film in a short time and removed by evaporation.
申请公布号 JPS61138952(A) 申请公布日期 1986.06.26
申请号 JP19840262322 申请日期 1984.12.11
申请人 FUJITSU LTD 发明人 NAKAGAWA KENJI
分类号 G03C11/00;G03F7/30;G03F7/42 主分类号 G03C11/00
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