| 摘要 |
PURPOSE:To obtain a semiconductive integrating circuit having a high density and a high quality by providing a polymer layer, a shade layer of UV ray and a resist layer on a surface of a patterned substrate in order and then by developing the resist film followed by carrying out a series of specific dry etching operations. CONSTITUTION:The titled etching method lies in laminating the polymer layer 13, the shade layer 14 of UV ray and the resist layer 15 on the surface of patterned layer 12 of the substrate 11 to form the multi-level polymer, and exposuring to the UV ray 16 and developing followed by removing the layer 14 with etching. And then, the obtd. titled layer is heated in an oxygen atmosphere 17 while irradiating the UV ray 18 to remove the polymer layer 13 by etching whereby a thin photoresist layer 15 is formed on the layer 14 and then is exposured to improve a patterning resolution, and a clean etching may be possible resulted in obtaining the prescribed integrating circuit having the above described properties. |
