| 摘要 |
PURPOSE:To improve the thermal reliability of a compound semiconductor device by using an ohmic contact electrode having heat resistance higher than an AuGe electrode. CONSTITUTION:Si ions are implanted selectively to a semi-insulating GaAs substrate 1 to form an N-type GaAs layer 2. An alloy MoGexSiy layer consisting of a high melting-point metal, such as Mo, W, Ta, etc. and Si and Ge is applied in thickness of 100nm through sputtering evaporation. The MoGexSiy layer is processed through dry etching employing CF4 gas to shape an ohmic contact electrode 3. The electrode 3 is formed in order to obtain ohmic characteristics, and the GaAs substrate 1 is thermally treated at 700-1,000 deg.C. An insulating layer 4 is shaped in thickness of approximately 600nm. The insulating layer 4 is composed of SiO2 or PSG through a CVD method. A wiring 5 by Al is formed. |
