发明名称 TARGET FOR SPUTTER AND ITS MANUFACTURE
摘要 PURPOSE:To obtain fine grain structure target capable of obtaining alloy film which is not damaged by large electric current conduction and not deteriorated with the lapse of time by performing crushing by rapid cooling means, in the titled manufacture in which alloy of rare earth metal, Fe and or Co is crushed, compacted and sintered. CONSTITUTION:Alloy composed of by atomic %, 20-35% rare earth metal and the balance Fe and or Co is melted, solidified in vacuum or inert gas atmosphere, then remelted, or raw material is charged then melted. From this, small flaky or powdery alloy is obtd. by rapid cooling means such as atomizing or centrifugal rapid cooling method. Next, the small flaky or powdery alloy i compacted and sintered. Said all processes are carried out in vacuum or inert gas atmosphere to obtain target. Thereby, since the structure unevenness is not observed due to <=20mu average grain size of rare earth metal and iron group metal, and mechnical crushing process after melting and solidification is excluded, the aimed target of low content of gas such as O2 is obtd.
申请公布号 JPS61139637(A) 申请公布日期 1986.06.26
申请号 JP19840260920 申请日期 1984.12.12
申请人 HITACHI METALS LTD 发明人 SHIBATA RYOICHI;HIRAO NORIYOSHI;NOZAWA YASUTO
分类号 C22C30/00;C22C1/04;C22C19/07;C22C28/00;C22C33/02;C22C38/00;C22C38/10;C23C14/14;C23C14/34 主分类号 C22C30/00
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