IMPROVED GAS GATE

摘要

The improved magnetic gas gate (42a) of the present invention reduces the back diffusion of gases between adjacent, operatively connected deposition chambers through the relatively narrow flow channel formed between the substrate and the passageway wall (43a) of the gas gate (42a) toward which the substrate is urged by forming a plurality of elongated grooves (86) in the passageway wall (43a) toward which the unlayered surface of the substrate is urged. The grooves (86) are substantially coextensive with the length of the passageway (43) so as to operatively interconnect the adjacent chambers. The flow channels thus established are adapted to accommodate a sufficient flow of inert sweep gases to further reduce the back diffusion of process gases through the narrow flow channel over that achieved by the maintenance of a constant pressure differential between the chambers which thereby establishes a substantially unidirectional gas flow between the chambers.