| 摘要 |
PURPOSE:To obtain high luminous efficiency by forming constitution having buried type hetero-junction structure in which current stopping layers compensat ed by adding manganese are shaped on both the right side and the left side of a partially formed active layer. CONSTITUTION:The title device has buried type hetero-junction structure in which current stopping layers compensated by adding Mn are shaped on both the right side and the left side of a partially formed active layer. When high- resistance InP layers 11 are grown as the current stopping layers and currents are constricted, the trouble of the turn-ON of a thyristor in conventional P-N-P-N structure is eliminated, and currents do not leak from the current stopping layers, thus acquiring a buried type laser having high efficiency. A P-type impurity, such as Cd, Zn, Be, Mn, etc. is added to compensate said layers in order to shape the high-resistance InP layers 11 because InP having high purity displays an N-type under the state of non-addition, but Mn among them has characteristics in which it is difficult to be oxidized, hardly diffuses in the solid phase, has low toxicity, has a large acceptor level (approximately 230meV) and has low vapor pressure in the vicinity of the temperature of the growth of a liquid layer. |
