| 摘要 |
<p>PURPOSE:To miniaturize a thermal head using thin film technique by forming a diode for preventing a reverse current which is connected to one end of a heating resistor using an amorphous semiconductor of hydrogenated tetrahydral group on an insulation substrate. CONSTITUTION:A cement and next an aluminium thin film as the first conductor are formed on an insulation substrate 11 using a sputtering method. Then a regist pattern is applied to the thin film and subjected to etching, thus forming a common electrode 1, a lead part 14 and individual wiring 5. Next a stainless steel mask is placed on the formation and P type amorphous silicon 19 membrane is formed using introduced silane gas with hydrogen as carrier gas by a plasma CVD unit, to be followed by the formation of I type using silane gas alone and finally N type using said gas mixed with phosfin gas. In this way a diode 3 is formed in the window of a mask. After this process, a layer insulation membrane 15, 17, a common wiring 16 and an upper outgoing elec trode 18 are formed.</p> |
