| 摘要 |
PURPOSE:To execute a plasma treatment to a pattern having excellent shape accuracy in the stage of producing a semiconductor device by rotating a substrate to be treated in a device during the formation of various patterns on the substrate by the plasma discharge of a reaction gas. CONSTITUTION:A chromium film 11 is desposited by sputtering, etc. as a light shielding film on the light transmittable glass substrate 10. A negative type electron ray resist film is coated on said film and after the resist film is exposed by electron rays, the film is developed to remove the unexposed part of the resist, by which the residual resist pattern 12 formed on the film 11 in the exposed part. The whisker-shaped scum 13 of the pattern 12 is then removed to form the substrate 9 having the desired residual resist pattern shape. Such substrate 9 is attached to a rotating device attached with a rotating means 18 to a support 14. The reactive gas such as CCl4 is supplied through an inflow pipe 4 and the support 4 is rotated by the flow of the gas. The substrate 9s rotates together with the support 14 is as well and the substrate is subjected to the plasma treatment to the pattern on the high accuracy by the plasma discharge generated from a high-frequency electrode 2.
|
