| 摘要 |
PURPOSE:To provide a highly reliable glass protection film without receiving a degree of etching of glass film, by partly overlapping the exposing part of a mask for providing a window to the glass film and the exposing part of a mask for eliminating electrode metal on the glass film. CONSTITUTION:A distance L1' from the end of p-n-junction of the exposing part 5a of the photo mask 5 for glass is set larger than the existing distance and it is overlapped in the specified distance L3'=L'-L2' with the exposing part 8a of the photo mask 8 for metal electrode. When the thickness of glass film 3 is t, L3' is selected to (0.6-0.7)t. According to this structure, the angle at the end of glass film 3 is ideally rounded and a highly reliable planar type semiconductor device can be obtained. The required and sufficient etching time can be realized and there is no unwanted residual glass film and a wide adhesive area of metal electrode 7 can be attained. |
