| 摘要 |
PURPOSE:To obtain a sole vertical mode by forming a semiconductor multilayer film of n/4 (n is refractive index) wavelength on a semiconductor substrate, and forming a semiconductor laser of double-hetero structure including a P-N junction thereon. CONSTITUTION:A semiconductor multilayer film 2 in which InP layers of nL/4(NL is refractive index) wavelength and N type InGaPsP layers of nH/4(nH is refractive index) wavelength are alternately laminated is formed on an N type InP substrate, an InP layer 3, an N type InGaAsP active layer 4, a P type InP layer 6, a P type InGaAsP layer 6 are further sequentially grown, and ohmic electrodes 7, 8 are formed. Further, the both ends of the layer 4 are etched at approx. 45 deg.C, to form an Si/SiO2 reflecting film 9 (60% reflectivity) is formed. When the electrodes 7, 8 are energized, a laser oscillation is generated by a resonator made of the active layer 4, the film 9 and the film 2 to emit an oscillating light from the film 9. Thus, a single vertical mode is obtained.
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