| 摘要 |
PURPOSE:To obtain an IC having a bus capacitor by forming a circuit element on the surface layer of a semiconductor substrate and an insulating film on the back surface of the substrate, connecting the element with a lead frame or an insulating film with other lead frame through a die pad, and applying potentials of different polarities to the frames. CONSTITUTION:An N<+> type region and two P type regions are formed in the surface layer of an N type semiconductor substrate 5 as a P-channel MOS transistor, and aluminum wirings 11 of a circuit element formed in the surface layer are connected with a lead frame 9 by bonding wirings 10. An SiO2 film 6 is coated on the back surface of the substrate 5, and bonded to a die pad 7 extending from another lead frame 8. Then, the ends of the frames 9, 8 are exposed as normal, and the other portion is sealed with resin 12. With the thus construction, when a positive potential is applied to the frame 9 and a negative potential is applied to the frame 8, a parallel flat plate capacitor having the film 6 as a dielectric between the substrate 5 and the pad 7 is formed to eliminate the necessity of an external capacitor. |
