| 摘要 |
PURPOSE:To enable the recording of the structure change, etc. of a sample with the sampling in short time of less than 10psec by exciting the photoelectric face by a laser beam and by using the X ray pulse generator of the structure to collide the generated electron beam with the target. CONSTITUTION:The picosecond laser pulse 2 from a laser device 1 is partially separated by a half mirror 3 and excited directly by hitting to the sample 9 of semiconductor, etc. and the transmitted light pulse is delayed by a delay circuit 4 and made incident on X ray pulse generating pipe 7 via reflection mirrors 5a, 5b, expander lens 6. The X ray to be generated from the target 7c by the electron beam that the photoelectric face 7a excited by the light pulse generates is irradiated on the sample 9 and the shadow graph thereof is recorded on an image recording device 10. The structure variation of the sample caused by the laser pulse can be thus sampled by the X ray pulse in ultrashort time. |
