| 摘要 |
An n-type region isolated by a p-type region is formed on a p-type substrate. Within the n-type region, in order to constitute an npn-transistor, an n+ region, a p-type region and an n+ region are formed. Within the n-type region, a p-type region is formed, and an insulating film and a metal layer are successively stacked on the p-type region to form an oxide film capacitor. The p-type region of the oxide film capacitor is in contact with the n+ region of the npn-transistor by means of a metal wiring. Within a p-type region of the oxide film capacitor, an n+ region is further formed. An additional npn-transistor may be formed by the n+ region, the p-type region and n-type region. |
