| 摘要 |
PURPOSE:To prevent the wirings of an upper layer from stepwisely disconnecting by forming grooves on an insulating film on an Si substrate, vapor-phase growing a metal film in the grooves to form a wiring layer of flat surface. CONSTITUTION:An SiO2 film 2 is accumulated by a reduced pressure CVD method on a p type Si substrate 1, a resist mask is coated, and grooves 3 are formed by an RIE with C2F6+O2. At this time a defect (h) remains on the side wall and the bottom of the groove, and the polymerized film of the SiO2, resist and etching gas remains. When the RIE is executed for 60sec or longer, it is effective. Then, a W film 4 is accumulated in selectively and self-aligning manner with the defect (h) as a nucleus by a reduced pressure CVD method using WF6+H2, buried flatly to form a wiring layer. A film of polysilicon and metal may be formed on the side wall of the groove as a nucleus of growing the W film. The thus formed device has flat surface, good dimensional accuracy of the wiring layer and no stepwise upper layer wiring disconnection. |
