| 摘要 |
PURPOSE:To obtain a semiconductor device having high reliability without migration by using gold for a source electrode for flowing a large main current and aluminum for a gate electrode for flowing a small signal current when forming the source electrode and the gate electrode on a semiconductor substrate. CONSTITUTION:The desired semiconductor region is formed in a semiconductor substrate 5, an insulating film 6 is coated on the surface, a hole is opened, and a source electrode 1 for flowing a main current is provided. A gate electrode 2 for flowing a signal current is provided on the film 6, an interlayer insulating film 4 is coated, and the electrode 1 is surrounded thereby. In this configuration, aluminum is used as normal for the electrode 2 for flowing the small signal current, but gold is used for the electrode 1 for flowing a large main current to avoid a defect due to a migration. |
