| 摘要 |
PURPOSE:To flatten an interlayer insulating film by a method wherein isotropic etching process mainly comprising chemical reaction is performed utilizing sensitive resin films patterned directly opposite to a metallic wiring as masks. CONSTITUTION:Metallic wirings 120 and interlayer insulating film 110 are bond- formed on an oxide film 130 on a silicon substrate 140. Next patterns directly opposite to the metallic wiring 120 are formed of sensitive resin films 150 on the interlayer insulating film 110. When chemical isolation etching process is performed utilizing the sensitive resin film 150 as masks to peel off said films 150, a gentle tapered interlayer insulating film 110 is left between the metallic wirings 120. Finally another interlayer insulating film 160 may be newly bond-formed to be flattened. |
