| 摘要 |
PURPOSE:To obtain an excellent incident luminous amount versus output characteristic with a small gamma value by discharging a part of stored electric charge till the next read after reset with respect to each picture element of a solid-state image pickup element. CONSTITUTION:It is supposed that an L (lateral) SIT150-11 is under normal incident luminous amount and very intensive light is made incident on an LSIT150-12. In this case, the light stimulated electric charge stored in the inverting layer under the gate oxide film of each element is stored much in the LSIT 150-12. In increasing the gate potential during the blanking period, the light stimulated electric charge in the LSIT-150-11 is unchanged but an amount in excess of a prescribed amount of the light stimulated electric charge in the LSIT150-12 is discharged to the substrate. When a vertical scanning signal reaches a clear voltage in this way, the excess electric charge is discharged at each time, a part of the light stimulated electric charge stored therein a picture element having large exposure is discharged to the substrate and an excellent image pickup characteristic is attained.
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