| 摘要 |
PURPOSE:To enable to sufficiently control leak current which generates between a floatation gate electrode and a control gate electrode, by a method wherein an insulation film on the floatation gate electrode is formed overhanging from the floatation gate electrode. CONSTITUTION:An field oxide film 34, a silicon oxcide film 35 and a polycrystalline silicon film 36 are formed on a P type silicon semiconductor substrate 31, and phosphorus is doped. A silicon oxide film 38, a silicon nitrided film 39, a silicon oxide film 40 and a polycrystalline silicon film 41 are formed, and phosphorus is doped. Etching is performed making a resist 42 as a mask, and a floating gate electrode 43 and a control gate electrode 44 are formed and etched in the latellal direction, and multi-layer structures composed of films 40, 39, 38 are made to hang from electrodes 43, 44. N type source drain areas 45, 46 are formed by ion-implanting arsenic. The distance between the floatation gate electrode 43 and the control gate electrode 44 becomes effectively long, and the generation of leak current can be controlled very low.
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