Method of making semiconductor devices having dielectric isolation regions

摘要

A method of making semiconductor devices having fine dielectric element isolation regions is disclosed. The method comprises the steps of preparing a semiconductor substrate of one conductivity type which is in a high impurity concentration; forming on the surface of the semi-conductor substrate an epitaxial layer having the same conductivity type as that of the semiconductor substrate in a low impurity concentration; etching off selected regions of the epitaxial layer so as to form islands of the epitaxial layer; forming a CVD oxide layer all over the surface of the structure obtained by the steps; applying high-molecular material film all over the surface of the oxide layer; and removing both the oxide layer and the high-molecular material film so as to expose the surface of the islands, whereby fine element isolation regions of the oxide layer are obtained between the islands.