| 摘要 |
PURPOSE:To efficiently perform a high-temperature heat treatment of Ga with no loss of time and form high-quality epitaxially grown films by dividing the molten solution reservoir to reservoirs for solvent and solute. CONSTITUTION:Since no covers are fitted to the reservoirs 20a-20d for a Ga solution and numerous small holes are opened in the tube walls, the contact area between high-purity hydrogen as ambient gas and the Ga solution 9 is so large that heat treatment is effectively carried out to remove impurities and oxide films. After the heat treatment, the diaphragm 8 is slidden to the position where the conducting holes 8a-8d are fitted for the bottoms of the reservoirs 20a-20d to flow the Ga solution into the reservoirs 21a-21d of the solute for dissolving the solute. Molten fluids for crystal growth are thereby prepared and cooled at a constant descending rate of temperature. Simultaneously the substrate holder 5 is slidden to successively contact the substrate 6 with each of molten fluid in the reservoirs 21a-21d and to form multilayers of epitaxial growth on the surface of the substrate 6. |
