| 摘要 |
PURPOSE:To shorten a through-hole boring process by boring openings to an alumina layer as first layer wiring and an inter-layer insulating film through one- time ion milling and attaching and forming a second layer metal through sputtering in a device. CONSTITUTION:First layer Al wiring 13 and a thick alumina film 12 and a thin alumina film 12' on the wiring 13 through an anodizing method are formed onto a semiconductor substrate 11. An inter-layer insulating film 14 is grown on the films 12, 12', and a photo-resist 16 for forming a through-hole is attached and patterned. The film 14 and the film 12' are tapered and bored through one-time ion milling by an ion milling device. The resist 16 can also be removed through etching at the same time. Targets are exchanged and Al is attached through sputtering as a second layer metal in said device, the photo-resist is patterned, and a second layer Al wiring 15 is formed through etching. Accordingly, a manufacturing process can be shortened while a breaking at the stepped section of the second layer Al wiring can be prevented. |
