发明名称 |
Three dimensional processing for monolithic IMPATTs |
摘要 |
The disclosure relates to a monolithic circuit and method of making same which includes the use of two substrates of different semiconductor materials or two substrates of the same semiconductor material wherein the processing steps required for certain parts of the circuit are incompatible with the processing steps required for other parts of the circuit.
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申请公布号 |
US4596069(A) |
申请公布日期 |
1986.06.24 |
申请号 |
US19840630485 |
申请日期 |
1984.07.13 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BAYRAKTAROGLU, BURHAN |
分类号 |
H01L25/18;H01L21/18;H01L23/48;H01L25/04;H01L27/00;H01L29/861;H01L29/864;(IPC1-7):H01L29/12;H01L29/40 |
主分类号 |
H01L25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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