| 摘要 |
PURPOSE:To make a source drain area small without needs of contact margin, by a method wherein a source drain layer is formed with polycrystalline silicon and polycrystalline silicon is pulled out as it is as an electrode and made to contact to an Al electrode. CONSTITUTION:Oxide films 202, 203, a gate polycrystalline silicon 204 and oxide films 206 at the upper part and at the side surface, are formed on a 1st electrical conductive type semiconductor substrate 201. A source drain area 205 which is a 2nd electrical conductive type impurities low density area, is formed by ion implanting, and an oxide film 207 is formed, and the oxide film 207 is left at the side of the gate polycrystalline silicon by the aeolotropy etching. A channel is formed at the substrate 201, and a 2nd electrical conductivity type polycrystalline silicon 208 and a nitrided film 209 are formed at the gate side and the channel side wall, and the thermal oxidation is performed and the nitrided film 209 is removed, and an Al film 210 is formed, and a silicon gate MOS transistor is accomplished. |
