| 摘要 |
PURPOSE:To improve the uniformity of thickness and physical property of the films generated by plasma CVD reaction by providing a doughnut-shaped transparent quartz member which forms a gaseous phase chemical reaction chamber, a heating source outside the quartz member, plural gas introductory nozzles, evacuation ports and a rotary/current-supplying mechanism for a plasma electrode susceptor. CONSTITUTION:A wafer carrier 23 loading wafers 22 is installed on a turntable 21 and gas 26 is uniformly introduced into the reaction furnace from gas introductory nozzles 24. At the same time, the interior of the reaction furnace is heated to a prescribed temperature as heaters 30-33 are temperature-controlled. Also the rotating/current-supplying mechanism 100 driven by a motorized rotating mechanism is rotated at a prescribed speed and a high-frequency current is fed from a plasma power source 110 to the input terminals 233 of the wafer carrier 23 via a rotary brush electrode to generate plasma discharges between the neighboring electrode plates 231 that impose the wafer 22, which are thereby evaporated by a plasma CVD reaction. |
